S8550

Product Category: Bipolar Transistors - BJT
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-92-3 Kinked Lead
Transistor Polarity: PNP
Configuration: Single
Maximum DC Collector Current: 1.5 A
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 280 mV
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 150 C
Series: SS8550
Packaging: Ammo Pack
Brand: onsemi
Continuous Collector Current: - 1.5 A
DC Collector/Base Gain hFE Min: 85
DC Current Gain hFE Max: 300
Height: 4.7 mm
Length: 4.7 mm
Product Type: BJTs - Bipolar Transistors
2000
Subcategory: Transistors
Width: 3.93 mm
Unit Weight: 240 mg