BUV22(CH)

Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  Details
Mounting Style: Through Hole
Package/Case: TO-204-2
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 300 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1.5 V
Maximum DC Collector Current: 40 A
Pd - Power Dissipation: 250 mW
Gain Bandwidth Product fT: 8 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 40 A
DC Collector/Base Gain hFE Min: 20
Height: 8.51 mm
Length: 38.86 mm
Product Type: BJTs - Bipolar Transistors
Technology: Si
Width: 26.67 mm