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TR-N 850V 16A 125W(TO3)
Šifra: 114818
11 na zalihi
Manufacturer:Central Semiconductor
Product Category:Bipolar Transistors - BJT
Mounting Style:Through Hole
Package/Case:TO-3-2
Transistor Polarity:NPN
Collector- Emitter Voltage VCEO Max:400 V
Collector- Base Voltage VCBO:850 V
Emitter- Base Voltage VEBO:9 V
Collector-Emitter Saturation Voltage:5 V
Maximum DC Collector Current:8 A
Pd - Power Dissipation:125 W
Gain Bandwidth Product fT:28 MHz
Minimum Operating Temperature:- 65 C
Maximum Operating Temperature:+ 200 C
Series:2N6545
Packaging:Tube
Technology:Si
Brand:Central Semiconductor
DC Collector/Base Gain hFE Min:7 at 5 A, 3 V
Product Type:BJTs - Bipolar Transistors