IRF640NSPBF

Manufacturer: Infineon
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 150 mOhms
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 44.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Brand: Infineon Technologies
Fall Time: 5.5 ns
Product Type: MOSFET
Rise Time: 19 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: SP001554094
Unit Weight: 4 g